50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax > 1 THz
نویسندگان
چکیده
Abstract We have demonstrated 50-nm enhancement-mode (E-mode) In0.7Ga0.3As PHEMTs with fmax in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In0.52Al0.48As barrier layer, together with a two-step recess process. The fabricated device with Lg = 50-nm exhibits VT = 0.1 V, gm,max = 1.75 mS/μm, fT = 465 GHz and fmax = 1.06 THz at a moderate value of VDS = 0.75 V. In addition, we have physically modeled the abnormal peaky behavior in Mason’s unilateral gain (Ug) at high values of VDS. A revised small signal model that includes a shunting Rgd-NDR with negative value successfully describes the behavior of the device from 1 to 67 GHz. .
منابع مشابه
50-nm E-mode In[subscript 0.7]ga[subscript 0.3]as Phemts on 100-mm Inp Substrate with F[subscript Max] > 1 Thz Accessed Terms of Use Detailed Terms 50-nm E-mode in 0.7 Ga 0.3 as Phemts on 100-mm Inp Substrate with F Max > 1 Thz
We have demonstrated 50-nm enhancement-mode (E-mode) In0.7Ga0.3As PHEMTs with fmax in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In0.52Al0.48As barrier layer, together with a two-step recess process. The fabricated device with Lg = 50-nm exhibits VT = 0.1 V, gm,max = 1.75 mS/μm, fT = 465 GHz and fmax = 1.06 THz at a moderate value of VDS = 0.75 V...
متن کامل30 - nm InAs PHEMTs With fT = 644 GHz and f max = 681 GHz Dae
We present 30-nm InAs pseudomorphic HEMTs (PHEMTs) on an InP substrate with record fT characteristics and well-balanced fT and fmax values. This result was obtained by improving short-channel effects through widening of the siderecess spacing (Lside) to 150 nm, as well as reducing parasitic source and drain resistances. To compensate for an increase in Rs and Rd due to Lside widening, we optimi...
متن کامل50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node
Continued research into the development of III–V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which beco...
متن کاملF T = 688 Ghz and F Max = 800 Ghz in L G = 40 Nm in 0.7 Ga 0.3 as Mhemts with G M_max > 2.7 Ms/μm
We have demonstrated 40-nm In0.7Ga0.3As Metamorphic HEMTs (MHEMTs) with a record value in fT. The devices feature a Pt gate sinking process to effectively thin down the In0.52Al0.48As barrier layer, together with dual Si d-doping in the barrier to lower the potential barrier in the S/D access region. The fabricated device with Lg = 40-nm exhibits VT = 0.05 V, gm,max = 2.7 mS/μm, fT = 688 GHz an...
متن کاملDesign of Photonic Crystal Polarization Splitter on InP Substrate
In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55mm wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010